SolarEdge and Infineon Extend Partnership to Bring Solid-State Protection to 800 VDC AI Data Centers

SolarEdge Technologies, Inc. (NASDAQ: SEDG) and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced on September 9, 2026, an extension of their collaboration to advance solid-state circuit breaker (SSCB) technology for high-voltage direct current (DC) distribution in AI and hyperscale data centers. The move addresses a critical gap in the power distribution layer between the solid-state transformer (SST) and the compute rack, advancing a comprehensive grid-to-rack solution for next-generation AI infrastructure.

The collaboration comes as rapidly increasing AI compute density pushes the industry toward higher-voltage DC distribution architectures, particularly the 800 VDC framework that has emerged as a leading industry standard. Unlike conventional alternating current (AC) systems, DC protection presents a fundamentally different engineering challenge. Without a natural current zero, mechanical interruption faces difficulties with arcing and is comparatively slow, requiring a different approach to circuit protection. SSCBs are designed to interrupt DC faults within microseconds, orders of magnitude faster than electromechanical breakers, with no mechanical contacts to separate. This capability is essential for achieving selectivity while maintaining high efficiency in increasingly power-dense infrastructure.

Under the extended collaboration, SolarEdge is leading the design of its SSCB solution, with Infineon providing its silicon carbide (SiC) JFET technology at the core of the protection devices. Infineon's CoolSiC JFET devices are designed to deliver efficient operation and superior robustness, helping to protect high-value compute equipment and enabling more compact, higher-density DC distribution designs. The partnership builds directly on SolarEdge's SST platform with Infineon SiC components, first announced in November 2025. The SST is designed to enable direct medium-voltage (13.8–34.5 kV) to 800–1500 VDC conversion at over 99% efficiency, collapsing multiple conversion stages into a single solution while reducing physical footprint.

"High-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection," said Shuki Nir, Chief Executive Officer of SolarEdge. "Solid-state protection will enable operators to achieve both, delivering ultra-fast and dependable fault isolation without sacrificing conversion performance. Infineon's silicon carbide technology is what makes it practical at scale."

"Today's data infrastructures have become more vulnerable to electrical faults, thereby driving the demand for smarter, faster and more robust power distribution systems," said Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon. "By combining our advanced silicon carbide JFET technology with SolarEdge's expertise in final power distribution, we are addressing these demands to ensure fast, safe and reliable operations in AI data centers."

Building on more than 20 years of leadership in DC-coupled power electronics, SolarEdge is developing an 800 VDC powertrain for AI factories — a DC-native chain that carries power from the medium-voltage grid connection through conversion, distribution and protection to the compute rack. Infineon's broad portfolio of silicon, silicon carbide and gallium nitride solutions provides the foundation for this architecture, supporting the decarbonization of AI infrastructure through lower losses, reduced environmental impact and improved total cost of ownership. The collaboration reflects a broader industry shift toward DC-native power architectures as AI workloads place unprecedented demands on data center power delivery, efficiency and reliability.